SK Hynix Accelerates 1c DRAM Node Transition: 6th-Gen Lithography to Become Primary Node by Early Next Year
Advanced DRAM Architecture & Node Migration SK Hynix Accelerates 1c DRAM Node Transition: 6th-Gen Lithography to Become Primary Node by Early Next Year Published: 07 Sep 2026 | Next-Gen DRAM Lithography & HBM4E Architecture Analytics 📌 1c DRAM Node Migration & Strategy Highlights 1c Share Trajectory 13% → 35% Overtakes 1b by Q1 2027 Target Platform HBM4E 7th-Gen Flagship Memory HBM4 Market Share Mid-50% SK Hynix Lead (Counterpoint) In a targeted move to secure technological supremacy in next-generation AI accelerators, SK Hynix is aggressively expanding the production share of its 10nm-class 6th-generation (1c) DRAM . With 1c silicon designated as the foundational core die for upcoming 7th-generation HBM4E architectures, the fabricator is rapidly transitioning wafer capacity to outpace competitors in both waf...